Serveur d'exploration sur l'Indium

Attention, ce site est en cours de développement !
Attention, site généré par des moyens informatiques à partir de corpus bruts.
Les informations ne sont donc pas validées.

Controlling the transverse localization of THz waves in an InSb based disordered waveguide array using temperature.

Identifieur interne : 000816 ( Main/Exploration ); précédent : 000815; suivant : 000817

Controlling the transverse localization of THz waves in an InSb based disordered waveguide array using temperature.

Auteurs : RBID : pubmed:23842164

Abstract

We propose that the transverse localization in a semiconductor-based disordered waveguide array can be made controllable in the terahertz (THz) regime by changing the ambient temperature. The standard scalar Helmholtz equation is used to describe THz wave propagation through the waveguide array. It is assumed that the waveguides are fabricated from the indium-antimonide (InSb) semiconductor, while the spacing between them is a dielectric. Disorder is introduced in the system by the random refractive index of the spacing medium. Our results demonstrate that the transverse width of the output intensity increases when increasing the temperature. This effect is attributed to the temperature-dependent electric permittivity of the used semiconductor. Then, the waveguides are composed of a dielectric and the spacing between them is filled with the InSb semiconductor. For this case, to introduce disorder, we assumed that the refractive indices of the waveguides are randomized. It is found that the output intensity becomes more localized with increasing temperature. However, further increasing the temperature leads to the delocalization of output intensity. The effect of spacing between adjacent waveguides on the threshold degree of disorder has also been investigated.

PubMed: 23842164

Links toward previous steps (curation, corpus...)


Le document en format XML

<record>
<TEI>
<teiHeader>
<fileDesc>
<titleStmt>
<title xml:lang="en">Controlling the transverse localization of THz waves in an InSb based disordered waveguide array using temperature.</title>
<author>
<name sortKey="Ardakani, Abbas Ghasempour" uniqKey="Ardakani A">Abbas Ghasempour Ardakani</name>
<affiliation wicri:level="1">
<nlm:affiliation>Department of Physics, College of Science, Shiraz University, Shiraz, Iran. abbas_gh42@yahoo.com</nlm:affiliation>
<country xml:lang="fr">Iran</country>
<wicri:regionArea>Department of Physics, College of Science, Shiraz University, Shiraz</wicri:regionArea>
</affiliation>
</author>
</titleStmt>
<publicationStmt>
<date when="2013">2013</date>
<idno type="RBID">pubmed:23842164</idno>
<idno type="pmid">23842164</idno>
<idno type="wicri:Area/Main/Corpus">000530</idno>
<idno type="wicri:Area/Main/Curation">000530</idno>
<idno type="wicri:Area/Main/Exploration">000816</idno>
</publicationStmt>
</fileDesc>
<profileDesc>
<textClass></textClass>
</profileDesc>
</teiHeader>
<front>
<div type="abstract" xml:lang="en">We propose that the transverse localization in a semiconductor-based disordered waveguide array can be made controllable in the terahertz (THz) regime by changing the ambient temperature. The standard scalar Helmholtz equation is used to describe THz wave propagation through the waveguide array. It is assumed that the waveguides are fabricated from the indium-antimonide (InSb) semiconductor, while the spacing between them is a dielectric. Disorder is introduced in the system by the random refractive index of the spacing medium. Our results demonstrate that the transverse width of the output intensity increases when increasing the temperature. This effect is attributed to the temperature-dependent electric permittivity of the used semiconductor. Then, the waveguides are composed of a dielectric and the spacing between them is filled with the InSb semiconductor. For this case, to introduce disorder, we assumed that the refractive indices of the waveguides are randomized. It is found that the output intensity becomes more localized with increasing temperature. However, further increasing the temperature leads to the delocalization of output intensity. The effect of spacing between adjacent waveguides on the threshold degree of disorder has also been investigated.</div>
</front>
</TEI>
<pubmed>
<MedlineCitation Owner="NLM" Status="PubMed-not-MEDLINE">
<PMID Version="1">23842164</PMID>
<DateCreated>
<Year>2013</Year>
<Month>07</Month>
<Day>11</Day>
</DateCreated>
<DateCompleted>
<Year>2014</Year>
<Month>01</Month>
<Day>14</Day>
</DateCompleted>
<Article PubModel="Print">
<Journal>
<ISSN IssnType="Electronic">1539-4522</ISSN>
<JournalIssue CitedMedium="Internet">
<Volume>52</Volume>
<Issue>18</Issue>
<PubDate>
<Year>2013</Year>
<Month>Jun</Month>
<Day>20</Day>
</PubDate>
</JournalIssue>
<Title>Applied optics</Title>
<ISOAbbreviation>Appl Opt</ISOAbbreviation>
</Journal>
<ArticleTitle>Controlling the transverse localization of THz waves in an InSb based disordered waveguide array using temperature.</ArticleTitle>
<Pagination>
<MedlinePgn>4228-36</MedlinePgn>
</Pagination>
<ELocationID EIdType="doi" ValidYN="Y">10.1364/AO.52.004228</ELocationID>
<Abstract>
<AbstractText>We propose that the transverse localization in a semiconductor-based disordered waveguide array can be made controllable in the terahertz (THz) regime by changing the ambient temperature. The standard scalar Helmholtz equation is used to describe THz wave propagation through the waveguide array. It is assumed that the waveguides are fabricated from the indium-antimonide (InSb) semiconductor, while the spacing between them is a dielectric. Disorder is introduced in the system by the random refractive index of the spacing medium. Our results demonstrate that the transverse width of the output intensity increases when increasing the temperature. This effect is attributed to the temperature-dependent electric permittivity of the used semiconductor. Then, the waveguides are composed of a dielectric and the spacing between them is filled with the InSb semiconductor. For this case, to introduce disorder, we assumed that the refractive indices of the waveguides are randomized. It is found that the output intensity becomes more localized with increasing temperature. However, further increasing the temperature leads to the delocalization of output intensity. The effect of spacing between adjacent waveguides on the threshold degree of disorder has also been investigated.</AbstractText>
</Abstract>
<AuthorList CompleteYN="Y">
<Author ValidYN="Y">
<LastName>Ardakani</LastName>
<ForeName>Abbas Ghasempour</ForeName>
<Initials>AG</Initials>
<Affiliation>Department of Physics, College of Science, Shiraz University, Shiraz, Iran. abbas_gh42@yahoo.com</Affiliation>
</Author>
</AuthorList>
<Language>eng</Language>
<PublicationTypeList>
<PublicationType>Journal Article</PublicationType>
</PublicationTypeList>
</Article>
<MedlineJournalInfo>
<Country>United States</Country>
<MedlineTA>Appl Opt</MedlineTA>
<NlmUniqueID>0247660</NlmUniqueID>
<ISSNLinking>0003-6935</ISSNLinking>
</MedlineJournalInfo>
</MedlineCitation>
<PubmedData>
<History>
<PubMedPubDate PubStatus="entrez">
<Year>2013</Year>
<Month>7</Month>
<Day>12</Day>
<Hour>6</Hour>
<Minute>0</Minute>
</PubMedPubDate>
<PubMedPubDate PubStatus="pubmed">
<Year>2013</Year>
<Month>7</Month>
<Day>12</Day>
<Hour>6</Hour>
<Minute>0</Minute>
</PubMedPubDate>
<PubMedPubDate PubStatus="medline">
<Year>2013</Year>
<Month>7</Month>
<Day>12</Day>
<Hour>6</Hour>
<Minute>1</Minute>
</PubMedPubDate>
</History>
<PublicationStatus>ppublish</PublicationStatus>
<ArticleIdList>
<ArticleId IdType="pii">257371</ArticleId>
<ArticleId IdType="pubmed">23842164</ArticleId>
</ArticleIdList>
</PubmedData>
</pubmed>
</record>

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV2/Data/Main/Exploration
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 000816 | SxmlIndent | more

Ou

HfdSelect -h $EXPLOR_AREA/Data/Main/Exploration/biblio.hfd -nk 000816 | SxmlIndent | more

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV2
   |flux=    Main
   |étape=   Exploration
   |type=    RBID
   |clé=     pubmed:23842164
   |texte=   Controlling the transverse localization of THz waves in an InSb based disordered waveguide array using temperature.
}}

Pour générer des pages wiki

HfdIndexSelect -h $EXPLOR_AREA/Data/Main/Exploration/RBID.i   -Sk "pubmed:23842164" \
       | HfdSelect -Kh $EXPLOR_AREA/Data/Main/Exploration/biblio.hfd   \
       | NlmPubMed2Wicri -a IndiumV2 

Wicri

This area was generated with Dilib version V0.5.76.
Data generation: Tue May 20 07:24:43 2014. Site generation: Thu Mar 7 11:12:53 2024